Researchers develop solid-state thermal transistor for better heat management
A team of researchers from UCLA has unveiled a first-of-its-kind stable and fully solid-state thermal transistor that uses an electric field to control a semiconductor device’s heat movement.
The group’s study, which will be published in the Nov. 3 issue of Science, details how the device works and its potential applications. With top speed and performance, the transistor could open new frontiers in heat management of computer chips through an atomic-level design and molecular engineering. The advance could also further the understanding of how heat is regulated in the human body.
“The precision control of how heat flows through materials has been a long-held but elusive dream for physicists and engineers,” said the study’s co-author Yongjie Hu, a professor of mechanical and aerospace engineering at the UCLA Samueli School of Engineering.” This new design principle takes a big leap toward that, as it manages the heat movement with the on-off switching of an electric field, just like how it has been done with electrical transistors for decades.”
Electrical transistors are the foundational building blocks of modern information technology. They were first developed by Bell Labs in the 1940s and have three terminals — a gate, a source and a sink. When an electrical field is applied through the gate, it regulates how electricity (in the form of electrons) moves through the chip. These semiconductor devices can amplify or switch electrical signals and power. But as they continue to shrink in size over the years, billions of transistors can fit on one chip, resulting in more heat generated from the movement of electrons, which affects chip performance. Conventional heat sinks passively draw heat away from hotspots, but it has remained a challenge to find a more dynamic control to actively regulate heat.
While there have been efforts in tuning thermal conductivity, their performances have suffered due to reliance on moving parts, ionic motions, or liquid solution components. This has resulted in slow switching speeds for heat movement on the order of minutes or far slower, creating issues in performance reliability as well as incompatibility with semiconductor manufacturing.
The new thermal transistor, which boasts a field effect (the modulation of the thermal conductivity of a material by the application of an external electric field) and a full solid state (no moving parts), offers high performance and compatibility with integrated circuits in semiconductor manufacturing processes. The team’s design incorporates the field effect on charge dynamics at an atomic interface to allow high performance using a negligible power to switch and amplify a heat flux continuously.
The UCLA team demonstrated electrically gated thermal transistors that achieved record-high performance with switching speed of more than 1 megahertz, or 1 million cycles per second. They also offered a 1,300% tunability in thermal conductance and reliable performance for more than 1 million switching cycles. More